strongir fet? IRFH8303PBF 1 2017-01-24 hexfet ? power mosfet base part number ? package type ? standard pack form quantity IRFH8303PBF pqfn 5 mm x 6 mm tape and reel 4000 irfh8303trpbf orderable part number v dss 30 v r ds(on) max 1.10 ? m ??? qg (typical) 58 nc i d (@t c (bottom) = 25c) 100 ? a r g (typical) 1.0 ? ? notes ? through ? are on page 9 absolute maximum ratings ?? parameter max. units v gs gate-to-source voltage 20 v i d @ t a = 25c continuous drain current, v gs @ 10v 43 a i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v 280 ?? i d @ t c(bottom) = 100c continuous drain current, v gs @ 10v 177 ?? i dm pulsed drain current 400 p d @t a = 25c power dissipation 3.7 w p d @t c(bottom) = 25c power dissipation 156 linear derating factor 0.029 w/c t j operating junction and -55 to + 150 c t stg storage temperature range i d @ t c = 25c continuous drain current, v gs @ 10v (source bonding technology limited) 100 ? applications ?? control mosfet for synchronous buck converter ? pqfn 5 x 6 mm features benefits low thermal resistance to pcb (<0.8c/w) enable better thermal dissipation low profile ( 0.9 mm) results in increased power density industry-standard pinout ?? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant, halogen-free environmentally friendlier msl1, industrial qualification increased reliability 100% rg tested increased reliability low r ds(on) ( 1.10 m ? ) lower conduction losses
2 2017-01-24 ? IRFH8303PBF d s g ??? parameter typ. max. units r ? jc (bottom) junction-to-case ? ??? 0.8 r ? jc (top) junction-to-case ? ??? 21 c/w r ? ja junction-to-ambient ? ??? 34 r ? ja (<10s) junction-to-ambient ? ??? 21 thermal resistance static @ t j = 25c (unless otherwise specified) ???? parameter min. typ. max. units conditions bv dss drain-to-source breakdown voltage 30 ??? ??? v v gs = 0v, i d = 250a ? bv dss / ? t j breakdown voltage temp. coefficient ??? 21 ??? mv/c reference to 25c, i d = 1.0ma r ds(on) static drain-to-source on-resistance ??? 0.90 1.10 v gs = 10v, i d = 50a ? ??? 1.30 1.70 v gs = 4.5v, i d = 50a ? v gs(th) gate threshold voltage 1.2 1.7 2.2 v v ds = v gs , i d = 150a ? v gs(th) gate threshold voltage coefficient ??? -5.7 ??? mv/c i dss drain-to-source leakage current ??? ??? 1.0 a v ds = 24v, v gs = 0v ??? ??? 150 v ds = 24v, v gs = 0v, t j = 125c i gss gate-to-source forward leakage ??? ??? 100 na v gs = 20 v gate-to-source reverse leakage ??? ??? -100 v gs = -20 v gfs forward transconductance 158 ??? ??? s v ds = 15 v, i d = 50a q g total gate charge ??? 119 179 v gs = 10v, v ds = 15v, i d = 50a q g total gate charge ??? 58 87 q gs1 pre-vth gate-to-source charge ??? 14 ??? ? v ds = 15v q gs2 post-vth gate-to-source charge ??? 8 ??? nc v gs = 4.5v q gd gate-to-drain charge ??? 19 ??? ? i d = 50a q godr gate charge overdrive ??? 17 ??? ? q sw switch charge (q gs2 + q gd ) ??? 27 ??? ? q oss output charge ??? 33 ??? nc v ds = 16v, v gs = 0v r g gate resistance ??? 1.0 ??? ? ? t d(on) turn-on delay time ??? 21 ??? v dd = 30v, v gs = 4.5v t r rise time ??? 91 ??? ns i d = 50a t d(off) turn-off delay time ??? 48 ??? ? r g = 1.8 ? t f fall time ??? 65 ??? ? c iss input capacitance ??? 7736 ??? v gs = 0v c oss output capacitance ??? 1363 ??? pf v ds = 24v c rss reverse transfer capacitance ??? 743 ??? ? ? = 1.0mhz m ?? diode characteristics ???? parameter min. typ. max. units conditions i s continuous source current ??? ??? 100 ? a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? 400 integral reverse (body diode) p-n junction diode. v sd diode forward voltage ??? ??? 1.0 v t j = 25c, i s =50a, v gs =0v ? t rr reverse recovery time ??? 33 50 ns t j = 25c, i f = 50a, v dd = 15v q rr reverse recovery charge ??? 51 77 nc di/dt = 200a/s ? avalanche characteristics ???? parameter typ. max. units e as single pulse avalanche energy ? ??? 355 mj
3 2017-01-24 ? IRFH8303PBF 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 7.0v 4.5v 4.0v 3.5v 3.0v bottom 2.5v ? 60s pulse width tj = 25c 2.5v fig 1. typical output characteristics fig 4. normalized on-resistance vs. temperature 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 20 40 60 80 100 120 140 160 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v i d = 50a fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs . gate-to-source voltage fig 3. typical transfer characteristics fig 2. typical output characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.5v ? 60s pulse width tj = 150c vgs top 15v 10v 7.0v 4.5v 4.0v 3.5v 3.0v bottom 2.5v 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v gs , gate-to-source voltage (v) 1.0 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 15v ? 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 50a v gs = 10v
4 2017-01-24 ? IRFH8303PBF 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 10msec 1msec operation in this area limited by r ds (on) 100sec dc limited by package fig 8. maximum safe operating area 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v fig 7. typical source-drain diode forward voltage fig 9. maximum drain current vs. case temperature 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 t h e r ma l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig 10. drain-to-source breakdown voltage fig 11. maximum effective transient thermal impedance, junction-to-case 25 50 75 100 125 150 t c , case temperature (c) 0 50 100 150 200 250 300 i d , d r a i n c u r r e n t ( a ) limited by package -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.6 1.0 1.4 1.8 2.2 2.6 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 150a i d = 250a i d = 1.0ma i d = 1.0a
5 2017-01-24 ? IRFH8303PBF 2 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 0.0 1.0 2.0 3.0 4.0 5.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 50a t j = 25c t j = 125c fig 12. on-resistance vs. gate voltage fig 13. maximum avalanche energy vs. drain current fig 14. single avalanche event: puls e current vs. pulse width 25 50 75 100 125 150 starting t j , junction temperature (c) 0 200 400 600 800 1000 1200 1400 1600 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 14a 25a bottom 50a 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 tav (sec) 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 125c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 125c and tstart = 25c (single pulse)
6 2017-01-24 ? IRFH8303PBF fig 15. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets fig 18. gate charge test circuit vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 19. gate charge waveform fig 17a. switching time test circuit fig 17b. switching time waveforms fig 16a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v t p v (br)dss i as fig 16b. unclamped inductive waveforms vdd ?
7 2017-01-24 ? IRFH8303PBF note: for the most current drawing please refer to ir website at http://www.infineon.com/package/ pqfn 5x6 outline "b" package details for more information on board mounting, including footprint and stencil recommendation, please refer to application note an-1136: http://www.infineon.com/technical-info/appnotes/an-1136.pdf for more information on package inspection techni ques, please refer to application note an-1154: http://www.infineon.com/technical-info/appnotes/an-1154.pdf pqfn 5x6 outline "g" package details
8 2017-01-24 ? IRFH8303PBF note: for the most current drawing please refer to ir website at http://www.infineon.com/package/ pqfn 5x6 tape and reel bo w p 1 ao ko code tape dimensions reel dimensions quadrant assignments for pin 1 orientation in tape dimension design to accommodate the component width dimension design to accommodate the component lenght dimension design to accommodate the component thickness pitch between successive cavity centers overall width of the carrier tape description typ e package 5 x 6 pqfn note: all dimension are nominal diameter reel qty wid th reel (mm) ao (mm) bo (mm) ko (mm) p1 (mm) w quadrant pin 1 (inch) w1 (mm) 13 4000 12.4 6.300 5.300 1.20 8.00 12 q1 xxxx xywwx xxxxx international rectifier logo part number (?4 or 5 digits?) marking code (per marking spec) assembly site code (per scop 200-002) date code pin 1 identifier lot code (eng mode - min last 4 digits of eati#) (prod mode - 4 digits of spn code) pqfn 5x6 part marking
9 2017-01-24 ? IRFH8303PBF qualification information ? ? qualification level ? moisture sensitivity level pqfn 5mm x 6mm msl1 (per jedec j-std-020d ??) rohs compliant yes industrial (per jedec jesd47f ?? guidelines) ? qualification standards can be found at international rectifier?s web site: http://www.infineon.com/p roduct-info/reliability ?? applicable version of jedec standard at the time of product release. notes: ? ? starting t j = 25c, l = 0.28mh, r g = 50 ? , i as = 50a. ? pulse width ? 400s; duty cycle ? 2%. ? r ? is measured at tj of approximately 90c. ? when mounted on 1 inch square pcb (fr-4). please refer to an-994 for more details: http://www.infineon.com/technical-info/appnotes/an-994.pdf ? calculated continuous current based on maxi mum allowable junction temperature. ? current is limited to 100a by source bonding technology. revision history date comments 10/22/2013 ?? added the rdson at vgs = 4.5v values, on page 2. 03/17/2015 ?? updated package outline and tape and reel on pages 7 and 8. 01/24/2017 ?? changed datasheet with infineon logo - all pages ?? added package outline for ?option g? on page 7. ?? added disclaimer on last page
10 2017-01-24 ? IRFH8303PBF trademarks of infineon technologies ag hvic?, ipm?, pfc?, au-convertir?, aurix?, c166?, canpak?, ci pos?, cipurse?, cooldp?, coolgan?, coolir?, coolmos?, coolset?, coolsic?, dave?, di-pol?, directfet?, drbl ade?, easypim?, econobridge?, econodual?, ec onopack?, econopim?, eicedriver?, eupec?, fcos?, ganpowir?, hexfet?, hitfet?, hybridpack?, imotion?, iram?, isofac e?, isopack?, ledrivir?, litix?, mipaq?, modstack?, my-d?, nov alithic?, optiga?, optimos?, origa?, powiraudio?, powi rstage?, primepack?, primestack?, profet?, pro-sil?, rasic?, real3?, smartlewis?, s olid flash?, spoc?, strongirfet?, supirbuck?, tempfe t?, trenchstop?, tricore?, uhvic?, xhp?, xmc? trademarks updated november 2015 other trademarks all referenced product or service names and trademarks are the property of their respective owners. edition 2016-04-19 published by infineon technologies ag 81726 munich, germany ? 2016 infineon technologies ag. all rights reserved. do you have a question about this document? email: erratum@infineon.com document reference ifx1 important notice the information given in th is document shall in no event be regarded as a guarantee of conditions or characteristics (?bescha ff enheitsgarantie?) . with respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. in addition, any information given in this document is subject to customer?s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer?s products and any use of the product of infineon technologies in customer?s applications. the data contained in th is document is exclusively intended for technically trained sta ff . it is the responsibility of customer?s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. for further information on the product, technology, delivery terms and conditions and prices please contact your nearest infineon technologies off ice ( www.infineon.com ). please note that this product is not qualified according to the aec q100 or aec q101 documents of the automotive electronics council. warnings due to technical requirements products may contain dangerous substanc es. for information on the types in question please contact your nearest infineon technologies o ff ice. except as otherwise explicitly approved by infineon technologies in a written document signed by authorized representatives of infineon technologies, infineon technologies? products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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